Selective etching of III-V nanowires for molecular junctions

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.

Detaljer

Författare
  • Christian Kallesoe
  • Kristian Molhave
  • Thomas Mårtensson
  • Torben Mikael Hansen
  • Lars Samuelson
  • Peter Boggild
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)1179-1181
TidskriftMicroelectronic Engineering
Volym85
Utgåva nummer5-6
StatusPublished - 2008
PublikationskategoriForskning
Peer review utfördJa