Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

Detaljer

Författare
  • F. Mazzola
  • J. W. Wells
  • A. C. Pakpour-Tabrizi
  • R. B. Jackman
  • B. Thiagarajan
  • Ph Hofmann
  • J. A. Miwa
Enheter & grupper
Externa organisationer
  • Norwegian University of Science and Technology
  • University College London
  • Aarhus University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer046403
TidskriftPhysical Review Letters
Volym120
Utgåva nummer4
StatusPublished - 2018 jan 26
PublikationskategoriForskning
Peer review utfördJa