Simultaneous growth mechanisms for Cu-seeded InP nanowires

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift


We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.


Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Atom- och molekylfysik och optik


Sidor (från-till)297-306
TidskriftNano Reseach
Utgåva nummer5
StatusPublished - 2012
Peer review utfördJa

Relaterad forskningsoutput

Karla Hillerich, 2013, Department of Physics, Lund University. 94 s.

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

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