Simultaneous growth mechanisms for Cu-seeded InP nanowires

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Simultaneous growth mechanisms for Cu-seeded InP nanowires. / Hillerich, Karla; Dick Thelander, Kimberly; Messing, Maria; Deppert, Knut; Johansson, Jonas.

I: Nano Reseach, Vol. 5, Nr. 5, 2012, s. 297-306.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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T1 - Simultaneous growth mechanisms for Cu-seeded InP nanowires

AU - Hillerich, Karla

AU - Dick Thelander, Kimberly

AU - Messing, Maria

AU - Deppert, Knut

AU - Johansson, Jonas

PY - 2012

Y1 - 2012

N2 - We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.

AB - We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 A degrees C and 370 A degrees C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 A degrees C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.

KW - Nanowires

KW - MOVPE

KW - MOCVD

KW - epitaxy

KW - InP

KW - Cu seed particle

U2 - 10.1007/s12274-012-0210-9

DO - 10.1007/s12274-012-0210-9

M3 - Article

VL - 5

SP - 297

EP - 306

JO - Nano Reseach

JF - Nano Reseach

SN - 1998-0124

IS - 5

ER -