Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

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Abstract

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Kemi
Originalspråkengelska
TidskriftApplied Physics Letters
Volym100
Utgåva nummer25
StatusPublished - 2012
PublikationskategoriForskning
Peer review utfördJa

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Jesper Wallentin, 2012, Lund University. 183 s.

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

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