Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

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Abstract

In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik
  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)310-316
TidskriftJournal of Crystal Growth
Volym248
StatusPublished - 2003
PublikationskategoriForskning
Peer review utfördJa