Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Elektroteknik och elektronik

Nyckelord

Originalspråkengelska
Titel på värdpublikation7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
FörlagLund University
Antal sidor2
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa
EvenemangProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sverige
Varaktighet: 2002 jun 242002 jun 28

Konferens

KonferensProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
LandSverige
OrtMalmö
Period2002/06/242002/06/28