Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Titel på värdpublikation7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
FörlagLund University
Antal sidor2
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa
EvenemangProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sverige
Varaktighet: 2002 jun 242002 jun 28

Konferens

KonferensProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
LandSverige
OrtMalmö
Period2002/06/242002/06/28