Size-effects in indium gallium arsenide nanowire field-effect transistors

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Size-effects in indium gallium arsenide nanowire field-effect transistors. / Zota, Cezar B.; Lind, E.

I: Applied Physics Letters, Vol. 109, Nr. 6, 063505, 08.08.2016.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - Size-effects in indium gallium arsenide nanowire field-effect transistors

AU - Zota, Cezar B.

AU - Lind, E.

PY - 2016/8/8

Y1 - 2016/8/8

N2 - We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

AB - We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

UR - http://www.scopus.com/inward/record.url?scp=84982252649&partnerID=8YFLogxK

U2 - 10.1063/1.4961109

DO - 10.1063/1.4961109

M3 - Article

AN - SCOPUS:84982252649

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063505

ER -