Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

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Abstract

Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Detaljer

Författare
  • K. Lawniczak-Jablonska
  • J. Libera
  • A. Wolska
  • M. T. Klepka
  • P. Dluzewski
  • J. Bak-Misiuk
  • E. Dynowska
  • P. Romanowski
  • J. Z. Domagala
  • Janusz Sadowski
  • A. Barcz
  • D. Wasik
  • A. Twardowski
  • A. Kwiatkowski
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)1609-1614
TidskriftPhysica Status Solidi. B: Basic Research
Volym248
Utgivningsnummer7
StatusPublished - 2011
PublikationskategoriForskning
Peer review utfördJa