Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

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Abstract

By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik

Nyckelord

Originalspråkengelska
Artikelnummer033508
TidskriftApplied Physics Letters
Volym103
Utgåva nummer3
StatusPublished - 2013
PublikationskategoriForskning
Peer review utfördJa

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