Temperature dependent properties of InSb and InAs nanowire field-effect transistors

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Abstract

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

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Nyckelord

Originalspråkengelska
TidskriftApplied Physics Letters
Volym96
Utgåva nummer15
StatusPublished - 2010
PublikationskategoriForskning
Peer review utfördJa