The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

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It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]


  • L. I. Murin
  • E. A. Tolkacheva
  • V. P. Markevich
  • A. R. Peaker
  • B. Hamilton
  • E. Monakhov
  • B. G. Svensson
  • Lennart Lindström
  • P. Santos
  • J. Coutinho
  • A. Carvalho
Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
TidskriftApplied Physics Letters
Utgåva nummer18
StatusPublished - 2011
Peer review utfördJa