The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

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Abstract

Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Guangzhou University
  • South China Normal University
  • Guangdong Academy of Sciences
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Artikelnummer106145
TidskriftNano Energy
Volym87
StatusPublished - 2021 sep 1
PublikationskategoriForskning
Peer review utfördJa