Thermal desorption of oxides on Si(100): A case study for the scanning photoelectron microscope at Max-Lab

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

A scanning photoelectron microscope, utilizing a focused beam of monochromatized photons in the energy range from 15 to 150 eV, has been used to study the thermal desorption of oxide layers on Si(100). The instrument can provide high-resolution photoelectron spectra from selected parts of the surface as well as images showing the lateral distribution (on a micrometer scale) of elements in different chemical states by monitoring the photoemission intensity of chemically shifted core levels. Both native (10-15 Å) and thick (200-400 Å) oxides have been studied. The desorption (at 840°C) of the native oxide proceeds through a phase of irregular (on a micrometer scale) and diminishing areas of dioxide until a clean surface is obtained. For the thick oxide, annealing to 1100°C creates circular voids in the oxide layer which grow linearly in diameter with annealing time. The surface in these voids mainly consists of clean silicon but a small amount of remaining SiO2 is observed. This remaining dioxide most probably consists of small clusters or particles. For both types of oxide, we find, during and after desorption, a surface-shifted component in the Si 2p core level spectra indicating that at least parts of the surface have an ordered structure which most probably is a 2 × 1 reconstruction.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Lund University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Acceleratorfysik och instrumentering

Nyckelord

Originalspråkengelska
Sidor (från-till)45-52
Antal sidor8
TidskriftJournal of Electron Spectroscopy and Related Phenomena
Volym84
Utgåva nummer1-3
StatusPublished - 1997 mar 1
PublikationskategoriForskning
Peer review utfördJa