Thickness dependent magnetic properties of (Ga,Mn) As ultrathin films

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Abstract

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn) As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferromagnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate modifications to take a nonuniform distribution of holes and Mn cations into account. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731202]

Detaljer

Författare
  • O. Proselkov
  • D. Sztenkiel
  • W. Stefanowicz
  • M. Aleszkiewicz
  • Janusz Sadowski
  • T. Dietl
  • M. Sawicki
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
Originalspråkengelska
Artikelnummer262405
TidskriftApplied Physics Letters
Volym100
Utgåva nummer26
StatusPublished - 2012
PublikationskategoriForskning
Peer review utfördJa