Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

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Abstract

Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.

Detaljer

Författare
  • Martin Frimmer
  • Jie Sun
  • Ivan Maximov
  • Hongxing Xu
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer133110
TidskriftApplied Physics Letters
Volym93
Utgåva nummer13
StatusPublished - 2008
PublikationskategoriForskning
Peer review utfördJa