Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

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Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.


Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
  • Annan elektroteknik och elektronik


Sidor (från-till)2882-2887
Antal sidor6
TidskriftACS Applied Electronic Materials
Utgåva nummer9
StatusPublished - 2020
Peer review utfördJa