Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a −119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a −111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −186.2 dB. Their active areas are 0.03 mm2 and 0.096 mm2 respectively.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Annan elektroteknik och elektronik
Originalspråkengelska
Titel på värdpublikationProceedings of 2018 Asia-Pacific Microwave Conference
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor1130-1132
Antal sidor3
ISBN (elektroniskt)978-4-9023-3945-1
ISBN (tryckt)978-1-5386-2184-4
StatusPublished - 2018 nov 9
PublikationskategoriForskning
Peer review utfördJa
Evenemang2018 Asia-Pacific Microwave Conference - Kyoto, Japan
Varaktighet: 2018 nov 62018 nov 9

Konferens

Konferens2018 Asia-Pacific Microwave Conference
Förkortad titelAPMC2018
LandJapan
OrtKyoto
Period2018/11/062018/11/09

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