Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

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Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]


  • P. Laukkanen
  • M. P. J. Punkkinen
  • J. Lang
  • M. Tuominen
  • M. Kuzmin
  • V. Tuominen
  • J. Dahl
  • Johan Adell
  • Janusz Sadowski
  • J. Kanski
  • V. Polojarvi
  • J. Pakarinen
  • K. Kokko
  • M. Guina
  • M. Pessa
  • I. J. Vayrynen
Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
TidskriftApplied Physics Letters
Utgåva nummer23
StatusPublished - 2011
Peer review utfördJa