Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.

Detaljer

Författare
  • Dominik Kriegner
  • Christian Panse
  • Bernhard Mandl
  • Kimberly Dick Thelander
  • Mario Keplinger
  • Johan M. Persson
  • Philippe Caroff
  • Daniele Ercolani
  • Lucia Sorba
  • Friedhelm Bechstedt
  • Julian Stangl
  • Guenther Bauer
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik

Nyckelord

Originalspråkengelska
Sidor (från-till)1483-1489
TidskriftNano Letters
Volym11
Utgåva nummer4
StatusPublished - 2011
PublikationskategoriForskning
Peer review utfördJa