Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process

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Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process. / Jönsson, Adam; Svensson, Johannes; Wernersson, Lars-Erik.

2018. Abstract från Compound Semiconductor Week 2018 , Boston, USA.

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T1 - Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process

AU - Jönsson, Adam

AU - Svensson, Johannes

AU - Wernersson, Lars-Erik

PY - 2018/1/16

Y1 - 2018/1/16

M3 - Konferensabstract

T2 - Compound Semiconductor Week 2018

Y2 - 29 May 2018 through 1 June 2018

ER -