Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.

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Abstract

The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.

Detaljer

Författare
  • Yumei Jing
  • Shaoyun Huang
  • Kai Zhang
  • Jinxiong Wu
  • Yunfan Guo
  • Hailin Peng
  • Zhongfan Liu
  • Hongqi Xu
Enheter & grupper
Externa organisationer
  • Peking University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
Originalspråkengelska
Sidor (från-till)1879-1885
TidskriftNanoscale
Volym8
Utgivningsnummer4
StatusPublished - 2016
PublikationskategoriForskning
Peer review utfördJa