Weyl Semi-Metal-Based High-Frequency Amplifiers

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.

Detaljer

Författare
  • A. Toniato
  • B. Gotsmann
  • E. Lind
  • C. B. Zota
Enheter & grupper
Externa organisationer
  • IBM Research Zurich
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Annan elektroteknik och elektronik
Originalspråkengelska
Titel på värdpublikation2019 IEEE International Electron Devices Meeting, IEDM
FörlagInstitute of Electrical and Electronics Engineers Inc.
ISBN (elektroniskt)9781728140315
ISBN (tryckt)978-1-7281-4033-9
StatusPublished - 2020 feb 13
PublikationskategoriForskning
Peer review utfördJa
Evenemang65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, USA
Varaktighet: 2019 dec 72019 dec 11

Publikationsserier

NamnTechnical Digest - International Electron Devices Meeting, IEDM
Volym2019-December
ISSN (tryckt)0163-1918
ISSN (elektroniskt)2156-017X

Konferens

Konferens65th Annual IEEE International Electron Devices Meeting, IEDM 2019
LandUSA
OrtSan Francisco
Period2019/12/072019/12/11