Andri Dhora

Power electronic devices play a crucial role in the functioning of the electrical grid, enabling conversions between AC and DC power, as well as between low and high voltages. They are found in a variety of everyday electrical appliances, such as power supplies, computers, and smartphones to name a few. Our society has recently seen a strong shift towards electrification, and it is projected that by the next decade roughly 80% of generated electricity will undergo multiple power conversion stages on the way to the consumers. This suggests a need to develop next-generation power electronic devices that are highly efficient and capable of handling high currents and high voltages. By achieving this, we can enhance the energy efficiency of a wide variety of existing systems and save energy which we already have, without the need for a costly new infrastructure.

Our current research project is dedicated to meeting this demand by advancing the development of Gallium Oxide semiconducting material for high-power electronic devices. Our primary goal is to fully exploit its unique physical properties to fabricate power devices with high current-voltage ratings and cost-effectiveness. Ultimately, our aim is to enhance the efficiency of electricity conversion and distribution, thereby contributing to a more environmentally sustainable energy grid.

Gallium oxide is a material with significant potential for low-cost high-power electronics. Its ultra-wide bandgap, relative to mainstream materials such as Silicon and Silicon Carbide, holds the promise of more energy-efficient operation at higher voltages, currents and operating temperatures, and in smaller device sizes, leading to reduced resource consumption.

To fully realise this potential, it is important to develop an epitaxial growth method for Gallium Oxide that ensures rapid growth of highly pure single-crystalline material. This approach would maximise throughput while enhancing voltage-blocking ability and our control over its conductivity. In addition, we aim to employ innovative processing methods to workaround the material’s low thermal conductivity, in order to enhance the heat dissipation capability of Gallium Oxide based devices.