Eleni Charitoudi

My research on III-V semiconductors,  a particular class of materials widely used in electronic and optical devices due to their exceptional properties, has significant practical implications. These materials are crucial for high-speed electronics, efficient LEDs, and advanced solar cells. By focusing on the nanoscale characterisation and functionalization of III-V semiconductor surfaces, I aim to understand their surface properties and facilitate the development of highly efficient devices with minimal energy consumption. This work aligns with sustainability goals, particularly by optimizing devices for renewable energy applications, significantly impacting the field.

In this project, I employ Scanning Tunneling Microscopy and Spectroscopy (STM/STS) to investigate these semiconductors' atomic surface structure and electronic properties. Additionally, I utilise various techniques available in synchrotron facilities for in-depth surface analysis. These include X-ray Photoemission Spectroscopy (XPS), conducted under ultrahigh vacuum or near-ambient conditions, to determine the chemical composition of the samples and Angular Resolved Photoemission Spectroscopy (ARPES) to assess the band distribution across different material symmetries.