Forskningsoutput per år
Forskningsoutput per år
Personlig profil
Forskning
Johannes Svensson was born in Lidköping, Sweden, in 1978.
He received the M.S. Degree in Physics with specialisation in Problem Solving and the Ph.D. degree in physics from Gothenburg University,
in 2004 and 2010 respectively.
During his time as a Ph.D. student his research interests included contact formation to carbon nanotubes and novel nanotube transistors.
Since 2011, he is with the Department of EIT, Lund University as a researcher focusing on III-V nanowire epitaxy for applications in
transistors for high speed devices and circuits.
His main research interests are
- III-V nanowire MOVPE growth
- Fabrication techiques for nanoelectronic devices and circuits
- Infrared photodetectors using InAsSb nanowires
- CMOS integration of n- and p-type III-V nanowires
- Tunnel field-effect transistors for low power electronics
Nyckelord
- nanowire
- III-V
- semiconductor
- transistor
- CMOS
- photodetector
- epitaxy
Fingeravtryck
Utforska forskningsämnen där Johannes Svensson är aktiv. Dessa ämnesetiketter kommer från personens arbeten. Tillsammans bildar de ett unikt fingeravtryck.
- 1 Liknande profiler
Nätverk
Externa samarbeten med länder/områden de senaste 5 åren
Forskningsoutput
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Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Löfstrand, A., Jafari Jam, R., Svensson, J., Jönsson, A., Menon, H., Jacobsson, D., Wernersson, L-E. & Maximov, I., 2022, I: Advanced Electronic Materials. 8, 9 , 2101388.Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review
Öppen tillgång -
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
Liu, Y-P., Yngman, S., Troian, A., D Acunto, G., Jönsson, A., Svensson, J., Mikkelsen, A., Wernersson, L-E. & Timm, R., 2022 apr. 15, I: Applied Surface Science.Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review
Öppen tillgång -
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhu, Z., Jönsson, A., Liu, Y. P., Svensson, J., Timm, R. & Wernersson, L. E., 2022 jan. 25, I: ACS Applied Electronic Materials. 4, 1, s. 531-538 8 s.Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review
Öppen tillgång -
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, S. R., Svensson, J., Skog, S., Johannesson, S. & Wernersson, L-E., 2022 okt. 19, I: IEEE Electron Device Letters. 43, 12, s. 2033 2036 s.Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review
Öppen tillgångFil11 Nedladdningar (Pure) -
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
Andric, S., Kilpi, O-P., Mamidala, S. R., Svensson, J., Lind, E. & Wernersson, L-E., 2022 apr. 28, I: IEEE Transactions on Electron Devices. 69, 6, s. 3055 3060 s.Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review
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INSIGHT: Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies
Wernersson, L., Borg, M., Svensson, J., Zota, C., Lindelöw, F., Jönsson, A., Lind, E., Kilpi, O., Ohlsson Fhager, L., Andric, S. & Hellenbrand, M.
2015/12/01 → 2019/05/31
Projekt: Forskning
Aktiviteter
- 1 Handledning av masterstudenter
-
Robin Athle
Mattias Borg (Första/primär/huvudhandledare) & Johannes Svensson (Andra handledare)
2018 sep. → 2019 feb.Aktivitet: Examination och handledarskap › Handledning av masterstudenter