Johannes Svensson was born in Lidköping, Sweden, in 1978. He received the MSc Degree in Physics with specialization in Problem Solving and the PhD degree in physics from Gothenburg University, in 2004 and 2010 respectively. During his time as a PhD student, his research interests included growth of carbon nanotubes, contact formation and novel nanotube transistors aimed towards low power electronics. In 2011, he joined the division of Electromagnetics and Nanoelectronics at the Department of Electrical and Information Technology, Lund University as a researcher. Since 2024 he is an associate professor. His research focuses on III-V semiconductor epitaxy, device fabrication and electrical characterization of infrared photodetectors and transistors for high-speed and low-power electronic applications. His main current research interest is heterogenous integration of III-V semiconductor nanowire devices on a Si CMOS platform, using a novel low-cost epitaxy technique, to achieve new electronic functionalities such as combining analog and digital circuits, in-memory computing and efficient photodetectors.

His main research interests are

- III-V nanowire growth using metal-organic vapor phase epitaxy (MOVPE)
- Fabrication techiques for nanoelectronic devices and circuits
- Infrared photodetectors using InAsSb nanowires
- CMOS integration of n- and p-type III-V nanowires
- Tunnel field-effect transistors for low power electronics