Ingenjörs- och materialvetenskap
Nanowires
100%
Data storage equipment
76%
Oxygen vacancies
55%
Tin oxides
44%
Electrodes
44%
Indium
41%
Diffusion barriers
39%
RRAM
37%
Heterojunctions
35%
Physical vapor deposition
33%
Electric potential
32%
Atomic layer deposition
30%
Electric breakdown
30%
Durability
25%
Interfaces (computer)
25%
Indium arsenide
21%
Silicon
21%
Tuning
20%
Compliance
20%
MOSFET devices
18%
Chemical properties
15%
Oxides
15%
Switches
12%
Metals
11%
VLSI circuits
10%
Oxidation-Reduction
8%
Resistors
8%
Hafnium
8%
Transistors
7%
Scalability
7%
Impact ionization
6%
Modulation
6%
Moderators
5%
Characterization (materials science)
5%
Oxygen
5%
Transconductance
5%
Geometry
5%
Kemiska föreningar
Nanowire
69%
Breakdown Voltage
40%
Voltage
37%
Diffusion Barrier
33%
Filament
33%
Behavior as Electrode
27%
Compliance
21%
Plate Like Crystal
21%
Physico-Chemical Property
18%
Dioxygen
17%
Impact Ionization
15%
Transconductance
13%
Band Bending
12%
Schottky Barrier
12%
Physical Vapour Deposition
11%
Parasitic
11%
Metal
10%
Atomic Layer Epitaxy
10%
Tunneling
9%
Liquid Film
8%
Dimension
6%
Resistance
5%
Fysik och astronomi
random access memory
62%
endurance
40%
filaments
28%
ITO (semiconductors)
27%
low voltage
26%
oxygen
24%
atomic layer epitaxy
20%
oxides
20%
vapor deposition
20%
tuning
20%
engineering
19%
electrodes
16%
chemical properties
14%
metals
6%
performance
5%
switches
5%
programming
5%
