A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

Imad Ud Din; Stefan  Andersson; Therese Forsberg; Henrik Sjöland

doi:10.1109/NORCHIP.2018.8573450

A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

Imad Ud Din, Stefan Andersson, Therese Forsberg, Henrik Sjöland

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

1 Citering (SciVal)

Sammanfattning

A three stacked power amplifier implemented in 28nm fully depleted silicon-on- insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.

Originalspråk	engelska
Titel på värdpublikation	2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor	1-4
Antal sidor	4
ISBN (elektroniskt)	978-1-5386-7656-1
ISBN (tryckt)	978-1-5386-7657-8
DOI	https://doi.org/10.1109/NORCHIP.2018.8573450
Status	Published - 2018 okt. 30
Evenemang	2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) - Tallin, Estland Varaktighet: 2018 okt. 30 → 2018 okt. 31

Konferens

Konferens	2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Land/Territorium	Estland
Ort	Tallin
Period	2018/10/30 → 2018/10/31

Ämnesklassifikation (UKÄ)

Annan elektroteknik och elektronik

Tillgång till dokument

10.1109/NORCHIP.2018.8573450

1 Avslutade

Design av effektiva millimetervågssändare i CMOS-teknologi
Forsberg, T., Törmänen, M., Sjöland, H. & Wernehag, J.
2013/05/01 → 2018/12/13
Projekt: Avhandling

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Din, I. U., Andersson, S., Forsberg, T., & Sjöland, H. (2018). A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI. I 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) (s. 1-4). IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NORCHIP.2018.8573450

@inproceedings{66d1edbf21eb466b8e81be273e1adea6,

title = "A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI",

abstract = "A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.",

author = "Din, {Imad Ud} and Stefan Andersson and Therese Forsberg and Henrik Sj{\"o}land",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/NORCHIP.2018.8573450",

language = "English",

isbn = "978-1-5386-7657-8",

pages = "1--4",

booktitle = "2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) ; Conference date: 30-10-2018 Through 31-10-2018",

}

Din, IU, Andersson, S, Forsberg, T & Sjöland, H 2018, A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI. i 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 1-4, 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) , Tallin, Estland, 2018/10/30. https://doi.org/10.1109/NORCHIP.2018.8573450

A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI. / Din, Imad Ud; Andersson, Stefan ; Forsberg, Therese; Sjöland, Henrik.

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2018. s. 1-4.

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

TY - GEN

T1 - A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

AU - Din, Imad Ud

AU - Andersson, Stefan

AU - Forsberg, Therese

AU - Sjöland, Henrik

PY - 2018/10/30

Y1 - 2018/10/30

N2 - A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.

AB - A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.

U2 - 10.1109/NORCHIP.2018.8573450

DO - 10.1109/NORCHIP.2018.8573450

M3 - Paper in conference proceeding

SN - 978-1-5386-7657-8

SP - 1

EP - 4

BT - 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

Y2 - 30 October 2018 through 31 October 2018

ER -

A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

Sammanfattning

Konferens

Ämnesklassifikation (UKÄ)

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Projekt

Design av effektiva millimetervågssändare i CMOS-teknologi

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