A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

Pascal Meinerzhagen; Oskar Andersson; Babak Mohammadi; Syed Muhammad Yasser Sherazi; Andreas Burg; Joachim Rodrigues

doi:10.1109/ESSCIRC.2012.6341319

A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

Pascal Meinerzhagen, Oskar Andersson, Babak Mohammadi, Syed Muhammad Yasser Sherazi, Andreas Burg, Joachim Rodrigues

Institutionen för elektro- och informationsteknik

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Originalspråk	engelska
Titel på värdpublikation	2012 Proceedings of the ESSCIRC (ESSCIRC)
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor	321-324
ISBN (tryckt)	978-1-4673-2212-6
DOI	https://doi.org/10.1109/ESSCIRC.2012.6341319
Status	Published - 2012
Evenemang	ESSIRC 2012 - Bordeaux, Frankrike Varaktighet: 2012 sep. 17 → 2012 sep. 21

Konferens

Konferens	ESSIRC 2012
Land/Territorium	Frankrike
Ort	Bordeaux
Period	2012/09/17 → 2012/09/21

Ämnesklassifikation (UKÄ)

Elektroteknik och elektronik

Tillgång till dokument

10.1109/ESSCIRC.2012.6341319

Citera det här

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title = "A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS",

author = "Pascal Meinerzhagen and Oskar Andersson and Babak Mohammadi and Sherazi, {Syed Muhammad Yasser} and Andreas Burg and Joachim Rodrigues",

year = "2012",

doi = "10.1109/ESSCIRC.2012.6341319",

language = "English",

isbn = "978-1-4673-2212-6",

pages = "321--324",

booktitle = "2012 Proceedings of the ESSCIRC (ESSCIRC)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

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note = "ESSIRC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

}

Meinerzhagen, P, Andersson, O, Mohammadi, B, Sherazi, SMY, Burg, A & Rodrigues, J 2012, A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS. i 2012 Proceedings of the ESSCIRC (ESSCIRC). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 321-324, ESSIRC 2012, Bordeaux, Frankrike, 2012/09/17. https://doi.org/10.1109/ESSCIRC.2012.6341319

A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS. / Meinerzhagen, Pascal; Andersson, Oskar; Mohammadi, Babak et al.
2012 Proceedings of the ESSCIRC (ESSCIRC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2012. s. 321-324.

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

TY - GEN

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AU - Meinerzhagen, Pascal

AU - Andersson, Oskar

AU - Mohammadi, Babak

AU - Sherazi, Syed Muhammad Yasser

AU - Burg, Andreas

AU - Rodrigues, Joachim

PY - 2012

Y1 - 2012

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DO - 10.1109/ESSCIRC.2012.6341319

M3 - Paper in conference proceeding

SN - 978-1-4673-2212-6

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EP - 324

BT - 2012 Proceedings of the ESSCIRC (ESSCIRC)

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Y2 - 17 September 2012 through 21 September 2012

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