A novel frequency-doubling device based on three-terminal ballistic junction

Ivan Shorubalko; Hongqi Xu; Ivan Maximov; D. Nilsson; Pär Omling; Lars Samuelson; Werner Seifert

doi:10.1109/DRC.2002.1029574

A novel frequency-doubling device based on three-terminal ballistic junction

Ivan Shorubalko, Hongqi Xu, Ivan Maximov, D. Nilsson, Pär Omling, Lars Samuelson, Werner Seifert

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Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Sammanfattning

Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature

Originalspråk	engelska
Titel på värdpublikation	Device Research Conference (Cat. No.02TH8606)
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor	159-160
ISBN (tryckt)	0-7803-7317-0
DOI	https://doi.org/10.1109/DRC.2002.1029574
Status	Published - 2002
Evenemang	Device Research Conference, 2002 - Santa Barbara, CA, USA Varaktighet: 2002 juni 24 → 2002 juni 26

Konferens

Konferens	Device Research Conference, 2002
Land/Territorium	USA
Ort	Santa Barbara, CA
Period	2002/06/24 → 2002/06/26

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10.1109/DRC.2002.1029574

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@inproceedings{6610e2badb2546509fb5685844298bf9,

title = "A novel frequency-doubling device based on three-terminal ballistic junction",

abstract = "Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature",

keywords = "GaInAs-InP, frequency multiplication, room temperature, GaInAs/InP quantum well structures, high-electron-mobility QW structures, trench gate-channel insulation, one-dimensional lateral-FET, 1D lateral-field-effect transistor, T-shaped ballistic junction, nonlinear electrical properties, frequency-doubling device, three-terminal ballistic junction",

author = "Ivan Shorubalko and Hongqi Xu and Ivan Maximov and D. Nilsson and P{\"a}r Omling and Lars Samuelson and Werner Seifert",

year = "2002",

doi = "10.1109/DRC.2002.1029574",

language = "English",

isbn = "0-7803-7317-0",

pages = "159--160",

booktitle = "Device Research Conference (Cat. No.02TH8606)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Device Research Conference, 2002 ; Conference date: 24-06-2002 Through 26-06-2002",

}

Shorubalko, I, Xu, H, Maximov, I, Nilsson, D, Omling, P , Samuelson, L & Seifert, W 2002, A novel frequency-doubling device based on three-terminal ballistic junction. i Device Research Conference (Cat. No.02TH8606). IEEE - Institute of Electrical and Electronics Engineers Inc., s. 159-160, Device Research Conference, 2002, Santa Barbara, CA, USA, 2002/06/24. https://doi.org/10.1109/DRC.2002.1029574

A novel frequency-doubling device based on three-terminal ballistic junction. / Shorubalko, Ivan; Xu, Hongqi; Maximov, Ivan; Nilsson, D.; Omling, Pär ; Samuelson, Lars; Seifert, Werner.

Device Research Conference (Cat. No.02TH8606). IEEE - Institute of Electrical and Electronics Engineers Inc., 2002. s. 159-160.

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

TY - GEN

T1 - A novel frequency-doubling device based on three-terminal ballistic junction

AU - Shorubalko, Ivan

AU - Xu, Hongqi

AU - Maximov, Ivan

AU - Nilsson, D.

AU - Omling, Pär

AU - Samuelson, Lars

AU - Seifert, Werner

PY - 2002

Y1 - 2002

N2 - Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature

AB - Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature

KW - GaInAs-InP

KW - frequency multiplication

KW - room temperature

KW - GaInAs/InP quantum well structures

KW - high-electron-mobility QW structures

KW - trench gate-channel insulation

KW - one-dimensional lateral-FET

KW - 1D lateral-field-effect transistor

KW - T-shaped ballistic junction

KW - nonlinear electrical properties

KW - frequency-doubling device

KW - three-terminal ballistic junction

U2 - 10.1109/DRC.2002.1029574

DO - 10.1109/DRC.2002.1029574

M3 - Paper in conference proceeding

SN - 0-7803-7317-0

SP - 159

EP - 160

BT - Device Research Conference (Cat. No.02TH8606)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - Device Research Conference, 2002

Y2 - 24 June 2002 through 26 June 2002

ER -

A novel frequency-doubling device based on three-terminal ballistic junction

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