A novel frequency-doubling device based on three-terminal ballistic junction

Ivan Shorubalko, Hongqi Xu, Ivan Maximov, D. Nilsson, Pär Omling, Lars Samuelson, Werner Seifert

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review


Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
Titel på värdpublikationDevice Research Conference (Cat. No.02TH8606)
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (tryckt)0-7803-7317-0
StatusPublished - 2002
EvenemangDevice Research Conference, 2002 - Santa Barbara, CA, USA
Varaktighet: 2002 juni 242002 juni 26


KonferensDevice Research Conference, 2002
OrtSanta Barbara, CA

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik


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