A two-stage mm-wave PA with 18.5% PAE in 65 nm CMOS

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Sammanfattning

A two-stage mm-wave power amplifier (PA) is presented. Designed in a 65 nm CMOS process, the PA employs capacitive neutralization in each stage for increased differential isolation and gain. Baluns are used for single-ended input/output signal to balanced signal conversion, and the interstage matching consists of a 2:1 transformer. With a 1.2 V supply, at 67 GHz, measurements show a gain of 16.8 dB, a 1dB-compression point (P1dB) of 8.4 dBm and a saturated output power (Psat) of 11.8dBm, with a peak power added efficiency (PAE) of 18.5 %. The PA core occupies an area of 100 um x 300 um.
Originalspråkengelska
Titel på värdpublikation2015 Asia-Pacific Microwave Conference (APMC)
Sidor1-3
Antal sidor3
Volym1
DOI
StatusPublished - 2015
Evenemang2015 Asia-Pacific Microwave Conference (APMC) - Nanjing, Kina
Varaktighet: 2015 dec. 62015 dec. 9

Publikationsserier

Namn
Volym1

Konferens

Konferens2015 Asia-Pacific Microwave Conference (APMC)
Land/TerritoriumKina
OrtNanjing
Period2015/12/062015/12/09

Ämnesklassifikation (UKÄ)

  • Elektroteknik och elektronik

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