Advanced patterning and processing for III-V nanowire device fabrication

Reza Jafari Jam

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

369 Nedladdningar (Pure)

Sammanfattning

Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. Costs related to substrates, lithography processes and gold consumption most strongly influence the final cost of nanowire-based devices. An optimum gold deposition process can facilitate reuse of substrates, avoid repetitive lithography processes and reduce the gold consumption in order to reduce the cost of the final device. Moreover, a novel deposition process is needed to deposit gold seeds in complex nanoscale templates used for guided growth of nanowires, and subsequent device fabrication, on commercially viable (001)-oriented Si and SOI substrates.
In this work, we report on nanowire seed definition by gold electrodeposition. Electron microscopy inspection and optical spectroscopy confirm that the subsequently grown III-V nanowires have surface morphology and crystal quality comparable to those of nanowires grown from seed particles defined by conventional thermal evaporation. For seeding of substrates used in a typical growth run, we used around 650 times less gold compared to thermal evaporation.
We also demonstrated the possibility of depositing seed particles in deep holes etched in thick templates to facilitate template-assisted growth of nanowires on (001) Si and InP substrates. In addition to a functional p-n junction on an (001) InP substrate, the first reported InP-InAs-InP axial heterostructures on an (001) substrate was demonstrated.
In order to reuse the substrate for multiple growth runs, growth of AlAs-GaAs nanowires for epitaxial lift-off was realized. Using selective gold electrodeposition, we demonstrated deposition of seed particles on a substrate after nanowire peel-off. AlAs-GaAs nanowires were subsequently regrown demonstrating the potential of this novel technique for substrate reuse.
Originalspråkengelska
KvalifikationDoktor
Tilldelande institution
  • Lunds Tekniska Högskola
Handledare
  • Samuelson, Lars, Biträdande handledare
  • Borgström, Magnus, Biträdande handledare
  • Pettersson, Håkan, handledare
UtgivningsortLund
Förlag
ISBN (tryckt)978-91-7895-404-9
ISBN (elektroniskt)978-91-7895-405-6
StatusPublished - 2019 dec. 16

Bibliografisk information

Defence details
Date: 2020-01-30
Time: 13:15
Place: Rydbergsalen, Fysicum, Sölvegatan 14, Lund University, Faculty of Engineering LTH
External reviewer(s)
Name: Agarwal, Ritesh
Title: Professor
Affiliation: University of Pennsylvania, USA
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Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik
  • Nanoteknik

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