An ultra-low power high-precision logarithmic-curvature compensated all-CMOS voltage reference in 65 nm CMOS

Tayebeh Ghanavati Nejad, Ebrahim Farshidi, Henrik Sjöland, Abdolnabi Kosarian

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

In this paper, a low-complexity resistorless high-precision sub-1 V MOSFET-only voltage reference is presented. To obtain an accurate output, a curvature-compensation technique is used, canceling its logarithmic temperature dependence regardless of the value of the mobility temperature exponent (γ). The circuit is realized in 65 nm CMOS technology and yields an output voltage of 574 mV, a temperature coefficient of 3.5 ppm∘C in the range of − 50 to 150 °C, a power supply rejection ratio (PSRR) of − 103 dB at 100 Hz, a line sensitivity of 6μVV in the supply voltage range of 1.3–3 V, a power dissipation of 650nW at 1.3 V supply, and an output noise of 1.7 μV/Hz at 100 Hz. The total active area of the design is 0.03 mm2. This voltage reference is suitable for low-power low-voltage applications which also require high precision.

Originalspråkengelska
Sidor (från-till)319-330
TidskriftAnalog Integrated Circuits and Signal Processing
Volym107
Nummer2
Tidigt onlinedatum2021 feb. 25
DOI
StatusPublished - 2021

Ämnesklassifikation (UKÄ)

  • Signalbehandling

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