Au-free epitaxial growth of InAs nanowires

Bernhard Mandl; Julian Stangl; Thomas Mårtensson; Anders Mikkelsen; Jessica Bolinsson; Lisa Karlsson; Gunther Bauer; Lars Samuelson; Werner Seifert

doi:10.1021/nl060452v

Au-free epitaxial growth of InAs nanowires

Bernhard Mandl, Julian Stangl, Thomas Mårtensson, Anders Mikkelsen, Jessica Bolinsson, Lisa Karlsson, Gunther Bauer, Lars Samuelson, Werner Seifert

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.

Originalspråk	engelska
Sidor (från-till)	1817-1821
Tidskrift	Nano Letters
Volym	6
Nummer	8
DOI	https://doi.org/10.1021/nl060452v
Status	Published - 2006

Bibliografisk information

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Synchrotron Radiation Research (011013009), Polymer and Materials Chemistry (LTH) (011001041)

Ämnesklassifikation (UKÄ)

Nanoteknik

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10.1021/nl060452v

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title = "Au-free epitaxial growth of InAs nanowires",

abstract = "III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.",

author = "Bernhard Mandl and Julian Stangl and Thomas M{\aa}rtensson and Anders Mikkelsen and Jessica Bolinsson and Lisa Karlsson and Gunther Bauer and Lars Samuelson and Werner Seifert",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Synchrotron Radiation Research (011013009), Polymer and Materials Chemistry (LTH) (011001041)",

year = "2006",

doi = "10.1021/nl060452v",

language = "English",

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T1 - Au-free epitaxial growth of InAs nanowires

AU - Mandl, Bernhard

AU - Stangl, Julian

AU - Mårtensson, Thomas

AU - Mikkelsen, Anders

AU - Bolinsson, Jessica

AU - Karlsson, Lisa

AU - Bauer, Gunther

AU - Samuelson, Lars

AU - Seifert, Werner

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Synchrotron Radiation Research (011013009), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2006

Y1 - 2006

N2 - III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.

AB - III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.

U2 - 10.1021/nl060452v

DO - 10.1021/nl060452v

M3 - Article

SN - 1530-6992

VL - 6

SP - 1817

EP - 1821

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Au-free epitaxial growth of InAs nanowires

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