Au-Seeded Growth of Vertical and in-Plane III-V Nanowires on Graphite Substrates.

Jesper Wallentin, Dominik Kriegner, Julian Stangl, Magnus Borgström

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

32 Citeringar (SciVal)

Sammanfattning

Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and GaAs was strongly improved by supplying the p-dopant DEZn before nanowire growth but not by supplying H2S or HCl. In-plane GaAs and GaP nanowire growth exhibited an unexpected behavior, where the seed particles seemingly reflected on the side facets of other nanowires. These results pave the way for vertical and in-plane hybrid graphene- nanowire devices.
Originalspråkengelska
Sidor (från-till)1707-1713
Antal sidor7
TidskriftNano Letters
Volym14
Utgåva4
DOI
StatusPublished - 2014

Ämnesklassifikation (UKÄ)

  • Nanoteknik

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