Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth

Material Science

• Nanowire 100%
• Block Copolymer 100%
• Dielectric Material 100%
• Indium 100%
• Temperature 40%
• Metal 30%
• Scanning Electron Microscopy 30%
• Solvent 30%
• Silicon Dioxide 30%
• Vapor Phase Epitaxy 30%
• Polystyrene 20%
• Devices 10%
• Density 10%
• Oxide Compound 10%
• Vapor 10%
• Nanowire Based Device 10%
• Silicon Nitride 10%
• Reactive Ion Etching 10%
• Spin Coating 10%
• Field Effect Transistor 10%

Chemical Engineering

• Nanowires 100%
• Block Copolymer 100%
• Indium Arsenide 100%
• Polymer 27%
• Temperature 27%
• Ethanol 27%
• Silica 27%
• Vapor Phase Epitaxy 27%
• Polystyrene 18%
• Pyridine 18%
• Oxygen 9%
• Oxide 9%
• Methanol 9%
• Spin Coating 9%
• Silicon Nitride 9%

Engineering

• Dielectrics 100%
• Arsenide 100%
• Images 22%
• Temperature 22%
• Volume Ratio 22%
• Dielectric Layer 22%
• Pore Diameter 22%
• Foundations 11%
• Financial Support 11%
• Parks 11%
• Nitride 11%
• Process Condition 11%
• Density 11%
• Nanowire Device 11%
• Room Temperature 11%
• Nanowire Diameter 11%
• Growth Temperature 11%
• Field-Effect Transistor 11%
• Initial Stage 11%
• Thin Layer 11%
• Nanofabrication Process 11%