Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas

Lars Ohlsson; Daniel Sjöberg; Lars Erik Wernersson

doi:10.1109/TMTT.2017.2707418

Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas

Lars Ohlsson, Daniel Sjöberg, Lars Erik Wernersson

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

Monolithically integrated millimeter-wave wavelet transmitters are presented and analyzed in this paper. Two designs that include compact dielectric resonator antennas with either inductive or self-resonant input characteristics are compared. The efficient transmitter front-end core consists of a resonant tunneling diode oscillator that is quenchable by a transistor switch. A physical diode model is used to formulate small-signal matching criteria and study codesign conditions. Fabricated transmitters provide up to 11-dBm equivalent isotropically radiated power in down to 80-ps wideband wavelets at V-band carrier frequencies. Analyses of the radiated waveform envelope and time-frequency characteristics give insight in the circuit operation.

Originalspråk	engelska
Artikelnummer	7945286
Sidor (från-till)	273-279
Antal sidor	7
Tidskrift	IEEE Transactions on Microwave Theory and Techniques
Volym	66
Nummer	1
DOI	https://doi.org/10.1109/TMTT.2017.2707418
Status	Published - 2018 jan. 1

Ämnesklassifikation (UKÄ)

Annan elektroteknik och elektronik
Nanoteknik

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10.1109/TMTT.2017.2707418

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title = "Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas",

abstract = "Monolithically integrated millimeter-wave wavelet transmitters are presented and analyzed in this paper. Two designs that include compact dielectric resonator antennas with either inductive or self-resonant input characteristics are compared. The efficient transmitter front-end core consists of a resonant tunneling diode oscillator that is quenchable by a transistor switch. A physical diode model is used to formulate small-signal matching criteria and study codesign conditions. Fabricated transmitters provide up to 11-dBm equivalent isotropically radiated power in down to 80-ps wideband wavelets at V-band carrier frequencies. Analyses of the radiated waveform envelope and time-frequency characteristics give insight in the circuit operation.",

keywords = "Circuit codesign, dielectric resonator antennas, diode oscillators, millimeter-wave (mmW) technology, monolithic antenna integration, resonant tunneling diodes (RTDs)",

author = "Lars Ohlsson and Daniel Sj{\"o}berg and Wernersson, {Lars Erik}",

year = "2018",

month = jan,

day = "1",

doi = "10.1109/TMTT.2017.2707418",

language = "English",

volume = "66",

pages = "273--279",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

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T1 - Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas

AU - Ohlsson, Lars

AU - Sjöberg, Daniel

AU - Wernersson, Lars Erik

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Monolithically integrated millimeter-wave wavelet transmitters are presented and analyzed in this paper. Two designs that include compact dielectric resonator antennas with either inductive or self-resonant input characteristics are compared. The efficient transmitter front-end core consists of a resonant tunneling diode oscillator that is quenchable by a transistor switch. A physical diode model is used to formulate small-signal matching criteria and study codesign conditions. Fabricated transmitters provide up to 11-dBm equivalent isotropically radiated power in down to 80-ps wideband wavelets at V-band carrier frequencies. Analyses of the radiated waveform envelope and time-frequency characteristics give insight in the circuit operation.

AB - Monolithically integrated millimeter-wave wavelet transmitters are presented and analyzed in this paper. Two designs that include compact dielectric resonator antennas with either inductive or self-resonant input characteristics are compared. The efficient transmitter front-end core consists of a resonant tunneling diode oscillator that is quenchable by a transistor switch. A physical diode model is used to formulate small-signal matching criteria and study codesign conditions. Fabricated transmitters provide up to 11-dBm equivalent isotropically radiated power in down to 80-ps wideband wavelets at V-band carrier frequencies. Analyses of the radiated waveform envelope and time-frequency characteristics give insight in the circuit operation.

KW - Circuit codesign

KW - dielectric resonator antennas

KW - diode oscillators

KW - millimeter-wave (mmW) technology

KW - monolithic antenna integration

KW - resonant tunneling diodes (RTDs)

U2 - 10.1109/TMTT.2017.2707418

DO - 10.1109/TMTT.2017.2707418

M3 - Article

AN - SCOPUS:85020725784

SN - 0018-9480

VL - 66

SP - 273

EP - 279

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 1

M1 - 7945286

ER -

Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas

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