Sammanfattning
A new fully-integrated concurrent dual band CMOS power amplifier (PA) which covers the first and third channels of IEEE 802.15.3c standard is presented. In order to achieve concurrent operation of the 60 GHz PA in two desired narrow frequency bands, the multi-frequency passive coupling matching networks design is proposed. The full wave electromagnetic analysis (by the conventional Method of Moments (MOM)) and circuit analysis (using Circuit Envelope (CE)) are performed for the passive and active parts, respectively, in order to completely characterize the PA structure. This PA model has also been used in system level simulations. The results have shown two fractional bandwidths of 5% and 3%, P1dB of 8.8 dBm and 7.9 dBm at 58.32 and 62.64 GHz, respectively. Maximum power added efficiency (PAE) of 13% is achieved in both targeted bands. Performance of this PA shows promising availability in the future dual band WPAN applications.
| Originalspråk | engelska |
|---|---|
| Sidor (från-till) | 1-7 |
| Tidskrift | Microelectronics and Solid State Electronics |
| Volym | 4 |
| Nummer | 1 |
| Status | Published - 2015 |
| Externt publicerad | Ja |
Ämnesklassifikation (UKÄ)
- Annan elektroteknik och elektronik