Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress

A Lushchik, C Lushchik, E Vasil'chenko, M Kirm, Indrek Martinson

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

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Sammanfattning

The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.
Originalspråkengelska
Sidor (från-till)299-304
TidskriftSurface Review and Letters
Volym9
Utgåva1
DOI
StatusPublished - 2002

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