Cryogenic Characteristics of InGaAs MOSFET

L. Sodergren; P. Olausson; E. Lind

doi:10.1109/TED.2023.3238382

Cryogenic Characteristics of InGaAs MOSFET

L. Sodergren, P. Olausson, E. Lind

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

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We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room temperature.

Originalspråk	engelska
Sidor (från-till)	1226-1230
Antal sidor	5
Tidskrift	IEEE Transactions on Electron Devices
Volym	70
Nummer	3
Tidigt onlinedatum	2023
DOI	https://doi.org/10.1109/TED.2023.3238382
Status	Published - 2023

Ämnesklassifikation (UKÄ)

Elektroteknik och elektronik

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10.1109/TED.2023.3238382

1 Doktorsavhandling (sammanläggning)

III-V Devices for Emerging Electronic Applications
Bidragets översatta titel : III-V komponenter för nya elektroniska applikationerOlausson, P., 2024 jan. 25, Lund: Department of Electrical and Information Technology, Lund University. 180 s.
Forskningsoutput: Avhandling › Doktorsavhandling (sammanläggning)

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III-V komponenter för nya elektroniska applikationer
Olausson, P. (Forskarstuderande), Lind, E. (Handledare) & Borg, M. (Biträdande handledare)
2019/07/01 → 2024/02/23
Projekt: Avhandling

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title = "Cryogenic Characteristics of InGaAs MOSFET",

abstract = "We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room temperature.",

keywords = "Band tail, charge carrier mobility, cryogenic electronics, InGaAs, MOSFETs",

author = "L. Sodergren and P. Olausson and E. Lind",

year = "2023",

doi = "10.1109/TED.2023.3238382",

language = "English",

volume = "70",

pages = "1226--1230",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Cryogenic Characteristics of InGaAs MOSFET

AU - Sodergren, L.

AU - Olausson, P.

AU - Lind, E.

PY - 2023

Y1 - 2023

N2 - We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room temperature.

AB - We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room temperature.

KW - Band tail

KW - charge carrier mobility

KW - cryogenic electronics

KW - InGaAs

KW - MOSFETs

U2 - 10.1109/TED.2023.3238382

DO - 10.1109/TED.2023.3238382

M3 - Article

AN - SCOPUS:85148437834

SN - 0018-9383

VL - 70

SP - 1226

EP - 1230

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Cryogenic Characteristics of InGaAs MOSFET

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Ämnesklassifikation (UKÄ)

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Forskningsoutput

III-V Devices for Emerging Electronic Applications

Projekt

III-V komponenter för nya elektroniska applikationer

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