@inproceedings{027b04dac39c47778e1150b02cd4ca00,
title = "Defect Structure of High-Temperature-Grown GaMnSb/GaSb",
abstract = "GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.",
author = "P. Romanowski and J. Bak-Misiuk and E. Dynowska and Domagala, {J. Z.} and Janusz Sadowski and T. Wojciechowski and A. Barcz and R. Jakiela and W. Caliebe",
year = "2010",
language = "English",
volume = "117",
publisher = "Polish Academy of Sciences",
number = "2",
pages = "341--343",
booktitle = "Acta Physica Polonica A",
note = "8th National Meeting of the Synchrotron Radiation Users ; Conference date: 24-09-2009 Through 26-09-2009",
}