Defect Structure of High-Temperature-Grown GaMnSb/GaSb

P. Romanowski, J. Bak-Misiuk, E. Dynowska, J. Z. Domagala, Janusz Sadowski, T. Wojciechowski, A. Barcz, R. Jakiela, W. Caliebe

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

8 Citeringar (SciVal)

Sammanfattning

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Originalspråkengelska
Titel på värdpublikationActa Physica Polonica A
FörlagPolish Academy of Sciences
Sidor341-343
Volym117
StatusPublished - 2010
Evenemang8th National Meeting of the Synchrotron Radiation Users - Podlesice, Polen
Varaktighet: 2009 sep. 242009 sep. 26

Publikationsserier

Namn
Nummer2
Volym117
ISSN (tryckt)0587-4246

Konferens

Konferens8th National Meeting of the Synchrotron Radiation Users
Land/TerritoriumPolen
OrtPodlesice
Period2009/09/242009/09/26

Ämnesklassifikation (UKÄ)

  • Fysik
  • Naturvetenskap

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