Degenerate p-doping of InP nanowires for large area tunnel diodes

Jesper Wallentin; Peter Wickert; Martin Ek; Anders Gustafsson; Reine Wallenberg; Martin Magnusson; Lars Samuelson; Knut Deppert; Magnus Borgström

doi:10.1063/1.3669697

Degenerate p-doping of InP nanowires for large area tunnel diodes

Jesper Wallentin, Peter Wickert, Martin Ek, Anders Gustafsson, Reine Wallenberg, Martin Magnusson, Lars Samuelson, Knut Deppert, Magnus Borgström

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

Originalspråk	engelska
Artikelnummer	253105
Tidskrift	Applied Physics Letters
Volym	99
Nummer	25
DOI	https://doi.org/10.1063/1.3669697
Status	Published - 2011

Bibliografisk information

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Ämnesklassifikation (UKÄ)

Kemi
Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)
Nanoteknik

Tillgång till dokument

10.1063/1.3669697

1 Doktorsavhandling (sammanläggning)

Doping of Semiconductor Nanowires
Wallentin, J., 2012, Lund University. 183 s.
Forskningsoutput: Avhandling › Doktorsavhandling (sammanläggning)

Fil

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
Wallenberg, R. (Manager)
Centrum för analys och syntes
Infrastruktur

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title = "Degenerate p-doping of InP nanowires for large area tunnel diodes",

abstract = "We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]",

author = "Jesper Wallentin and Peter Wickert and Martin Ek and Anders Gustafsson and Reine Wallenberg and Martin Magnusson and Lars Samuelson and Knut Deppert and Magnus Borgstr{\"o}m",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",

year = "2011",

doi = "10.1063/1.3669697",

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T1 - Degenerate p-doping of InP nanowires for large area tunnel diodes

AU - Wallentin, Jesper

AU - Wickert, Peter

AU - Ek, Martin

AU - Gustafsson, Anders

AU - Wallenberg, Reine

AU - Magnusson, Martin

AU - Samuelson, Lars

AU - Deppert, Knut

AU - Borgström, Magnus

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2011

Y1 - 2011

N2 - We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

AB - We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

U2 - 10.1063/1.3669697

DO - 10.1063/1.3669697

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Degenerate p-doping of InP nanowires for large area tunnel diodes

Sammanfattning

Bibliografisk information

Ämnesklassifikation (UKÄ)

Tillgång till dokument

Fingeravtryck

Forskningsoutput

Doping of Semiconductor Nanowires

Utrustning

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

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