Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

L. Barrutia; I. García; E. Barrigón; M. Ochoa; I. Lombardero; M. Hinojosa; P. Caño; J. Bautista; L. Cifuentes; I. Rey-Stolle; C. Algora

doi:10.1109/CDE.2018.8596996

Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

L. Barrutia, I. García, E. Barrigón, M. Ochoa, I. Lombardero, M. Hinojosa, P. Caño, J. Bautista, L. Cifuentes, I. Rey-Stolle, C. Algora

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

9 Citeringar (SciVal)

Sammanfattning

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

Originalspråk	engelska
Titel på värdpublikation	Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
Redaktörer	Javier Mateos, Tomas Gonzalez
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (elektroniskt)	978-1-5386-5779-9
DOI	https://doi.org/10.1109/CDE.2018.8596996
Status	Published - 2018
Evenemang	12th Spanish Conference on Electron Devices, CDE 2018 - Salamanca, Spanien Varaktighet: 2018 nov. 14 → 2018 nov. 16

Konferens

Konferens	12th Spanish Conference on Electron Devices, CDE 2018
Land/Territorium	Spanien
Ort	Salamanca
Period	2018/11/14 → 2018/11/16

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10.1109/CDE.2018.8596996

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Barrutia, L., García, I., Barrigón, E., Ochoa, M., Lombardero, I., Hinojosa, M., Caño, P., Bautista, J., Cifuentes, L., Rey-Stolle, I., & Algora, C. (2018). Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%. I J. Mateos, & T. Gonzalez (Red.), Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018 [8596996] IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CDE.2018.8596996

Barrutia, L. ; García, I. ; Barrigón, E. ; Ochoa, M. ; Lombardero, I. ; Hinojosa, M. ; Caño, P. ; Bautista, J. ; Cifuentes, L. ; Rey-Stolle, I. ; Algora, C. / Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018. redaktör / Javier Mateos ; Tomas Gonzalez. IEEE - Institute of Electrical and Electronics Engineers Inc., 2018.

@inproceedings{9d9722fb9bbb4974857d970756429874,

title = "Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%",

abstract = "This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.",

keywords = "Ge wafers, III-V semiconductors, MOVPE, multijunction solar cell",

author = "L. Barrutia and I. Garc{\'i}a and E. Barrig{\'o}n and M. Ochoa and I. Lombardero and M. Hinojosa and P. Ca{\~n}o and J. Bautista and L. Cifuentes and I. Rey-Stolle and C. Algora",

year = "2018",

doi = "10.1109/CDE.2018.8596996",

language = "English",

editor = "Javier Mateos and Tomas Gonzalez",

booktitle = "Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "12th Spanish Conference on Electron Devices, CDE 2018 ; Conference date: 14-11-2018 Through 16-11-2018",

}

Barrutia, L, García, I, Barrigón, E, Ochoa, M, Lombardero, I, Hinojosa, M, Caño, P, Bautista, J, Cifuentes, L, Rey-Stolle, I & Algora, C 2018, Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%. i J Mateos & T Gonzalez (red), Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018., 8596996, IEEE - Institute of Electrical and Electronics Engineers Inc., 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca, Spanien, 2018/11/14. https://doi.org/10.1109/CDE.2018.8596996

Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%. / Barrutia, L.; García, I.; Barrigón, E.; Ochoa, M.; Lombardero, I.; Hinojosa, M.; Caño, P.; Bautista, J.; Cifuentes, L.; Rey-Stolle, I.; Algora, C.

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018. red. / Javier Mateos; Tomas Gonzalez. IEEE - Institute of Electrical and Electronics Engineers Inc., 2018. 8596996.

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

TY - GEN

T1 - Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

AU - Barrutia, L.

AU - García, I.

AU - Barrigón, E.

AU - Ochoa, M.

AU - Lombardero, I.

AU - Hinojosa, M.

AU - Caño, P.

AU - Bautista, J.

AU - Cifuentes, L.

AU - Rey-Stolle, I.

AU - Algora, C.

PY - 2018

Y1 - 2018

N2 - This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

AB - This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

KW - Ge wafers

KW - III-V semiconductors

KW - MOVPE

KW - multijunction solar cell

U2 - 10.1109/CDE.2018.8596996

DO - 10.1109/CDE.2018.8596996

M3 - Paper in conference proceeding

AN - SCOPUS:85061480209

BT - Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

A2 - Mateos, Javier

A2 - Gonzalez, Tomas

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th Spanish Conference on Electron Devices, CDE 2018

Y2 - 14 November 2018 through 16 November 2018

ER -

Barrutia L, García I, Barrigón E, Ochoa M, Lombardero I, Hinojosa M et al. Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%. I Mateos J, Gonzalez T, redaktörer, Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018. IEEE - Institute of Electrical and Electronics Engineers Inc. 2018. 8596996 https://doi.org/10.1109/CDE.2018.8596996

Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

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