Dissociative NH3 adsorption on the Si(100)2 × 1 surface at 300 K

Christer Larsson, Anders Flodström

    Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

    Sammanfattning

    High resolution electron energy loss spectroscopy has been used to determine how NH3 adsorbs on the Si(100)2 × 1 surface at 300 K. We find that the NH3 molecules dissociate into NH2 and H on adsorption. Combination bands, overtones and double losses for the Si---NH2 group are observed. An anneal to 800 K is sufficient to dissociate the adsorbed NH2 groups while the majority of the Si---H bonds remain intact. An anneal to 1100 K is enough to break the Si-H bonds and start the formation of silicon nitride.
    Originalspråkengelska
    Sidor (från-till)353-356
    TidskriftSurface Science
    Volym241
    Nummer3
    DOI
    StatusPublished - 1991

    Ämnesklassifikation (UKÄ)

    • Elektroteknik och elektronik

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