Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

Gvidas Astromskas; Reine Wallenberg; Lars-Erik Wernersson

doi:10.1116/1.3222859

Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

Gvidas Astromskas, Reine Wallenberg, Lars-Erik Wernersson

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

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InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]

Originalspråk	engelska
Sidor (från-till)	2222-2226
Tidskrift	Journal of Vacuum Science and Technology B
Volym	27
Nummer	5
DOI	https://doi.org/10.1116/1.3222859
Status	Published - 2009

Bibliografisk information

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)

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10.1116/1.3222859

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title = "Electrical characterization of thin InAs films grown on patterned W/GaAs substrates",

abstract = "InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]",

author = "Gvidas Astromskas and Reine Wallenberg and Lars-Erik Wernersson",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)",

year = "2009",

doi = "10.1116/1.3222859",

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journal = "Journal of Vacuum Science and Technology B",

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T1 - Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

AU - Astromskas, Gvidas

AU - Wallenberg, Reine

AU - Wernersson, Lars-Erik

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2009

Y1 - 2009

N2 - InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]

AB - InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]

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DO - 10.1116/1.3222859

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JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

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Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

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