Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

T. P. Martin; A. Szorkovszky; A. P. Micolich; A. R. Hamilton; C. A. Marlow; H. Linke; R. P. Taylor; Lars Samuelson

doi:10.1063/1.2957033

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

T. P. Martin, A. Szorkovszky, A. P. Micolich, A. R. Hamilton, C. A. Marlow, H. Linke, R. P. Taylor, Lars Samuelson

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The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.

Originalspråk	engelska
Artikelnummer	012105
Tidskrift	Applied Physics Letters
Volym	93
Nummer	1
DOI	https://doi.org/10.1063/1.2957033
Status	Published - 2008

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Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)

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title = "Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts",

abstract = "The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.",

author = "Martin, \{T. P.\} and A. Szorkovszky and Micolich, \{A. P.\} and Hamilton, \{A. R.\} and Marlow, \{C. A.\} and H. Linke and Taylor, \{R. P.\} and Lars Samuelson",

year = "2008",

doi = "10.1063/1.2957033",

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T1 - Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

AU - Martin, T. P.

AU - Szorkovszky, A.

AU - Micolich, A. P.

AU - Hamilton, A. R.

AU - Marlow, C. A.

AU - Linke, H.

AU - Taylor, R. P.

AU - Samuelson, Lars

PY - 2008

Y1 - 2008

N2 - The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.

AB - The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.

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U2 - 10.1063/1.2957033

DO - 10.1063/1.2957033

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012105

ER -

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

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