Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions

Naseem Abdel, Jan Pallon, Mariusz Graczyk, Ivan Maximov, Lars Wallman

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review


This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.
Sidor (från-till)1182-1188
TidskriftIEEE Transactions on Nuclear Science
StatusPublished - 2013

Bibliografisk information

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007), Solid State Physics (011013006), Biomedical Engineering (011200011)

Ämnesklassifikation (UKÄ)

  • Nanoteknik
  • Acceleratorfysik och instrumentering


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