Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
Originalspråkengelska
Titel på värdpublikation2013 International Conference on Indium Phosphide and Related Materials (IPRM)
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor1-2
DOI
StatusPublished - 2013
Evenemang25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan
Varaktighet: 2013 maj 192013 maj 23

Publikationsserier

Namn
ISSN (tryckt)1092-8669

Konferens

Konferens25th International Conference on Indium Phosphide and Related Materials (IPRM)
Land/TerritoriumJapan
OrtKobe
Period2013/05/192013/05/23

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik
  • Elektroteknik och elektronik

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